Alpha and Omega Semiconductor (AOS) has introduced the AOPL66801, an 80V MOSFET featuring a half-bridge configuration in its advanced DFN6x5 AmpStack™ package. This is being done to cater to the increased need for higher power-density applications starting from AI data center power systems to industrial machinery and power tools. The new package uses a vertically stacked die structure with high-side and low-side MOSFETs in the same package. It helps to provide a high level of power density in addition to optimal PCB area utilization as compared to other traditional MOSFET packages. With its optimal clip design, the parasitic inductance between two MOSFETs is reduced, which helps to reduce phase-node voltage ringing and device stress. AOPL66801 has a Kelvin sense pin that ensures the stability of the gate voltage during fast switching.
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The AOPL66801 can withstand up to 175°C maximum junction temperature. It provides better thermal performance and hence more reliable performance. Thus, the AOPL66801 is an excellent device for use in power conversion applications where space is a concern. “Our new AmpStack™ half-bridge packaging is a game-changer for designers looking to increase power density compared to solutions using two DFN5x6 packages,” said Peter H. Wilson, Sr. Director of the MOSFET product line at AOS. “In addition, by designing the package for low source parasitic inductance, we’ve drastically reduced phase node ringing and MOSFET stress. Customers don’t just get more power-they get significantly higher application reliability.”