Enabling mutual customers to accelerate their development of advanced-node RF designs for 5G/6G applications, Synopsys announced it has developed an RF design reference flow and companion design solutions kit (DSK) that enhance productivity and speed design closure on Samsung Foundry’s 8nm RF low-power FinFET process. The 8nm RF design reference flow, which features tightly integrated solutions from Synopsys and Ansys, enhances time-to-results, quality-of-results and cost-of-results for next-generation RF design.
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“Samsung’s latest RF solution, the 8nm RF process technology, could massively improve the performance and power efficiency of 5G communication chips,” said Sangyun Kim, corporate vice president of the Foundry Design Technology Team at Samsung Electronics. “We are pleased that the 8nm RF design reference flow and design solution kit that we developed in close collaboration with Ansys and Synopsys will support our mutual customers in meeting the demands of growing design complexity in today’s hyper-connected world.”
Advanced-node analog and RF designs are integral to the applications fueling our digital world of smart everything. However, it can be complex and time-consuming to design these chips to meet the bandwidth and latency requirements of applications like 5G/6G, automotive and high-performance computing. Available today, the 8nm RF design reference flow streamlines the process with features that deliver faster layout design turnaround time with industry-leading circuit simulation and layout productivity performance, as well as accurate electromagnetic (EM) modeling. The reference flow documents a proven methodology for RF design with Synopsys and Ansys tools that spans schematic design, simulation, layout, extraction, electromagnetic (EM) simulation and physical verification. The associated DSK includes a set of application notes, tutorials and design examples that cover advanced design methodology topics, including: