Toshiba Electronic Devices & Storage Corporation has launched the IX800FXF2YMS4, a 3300V, 800A dual silicon carbide (SiC) MOSFET module designed to improve the reliability, efficiency and compactness of industrial equipment. Built with Toshiba’s third-generation SiC MOSFET chips, the module targets applications including railway traction inverters and converters, renewable energy power generation, power conversion systems and industrial motor controls. Its optimized SiC chip design provides an I²t characteristic of 300kA²s, indicating high surge current capability under abnormal operating conditions.
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The module also features a typical drain-source on-voltage of 1.4V, helping reduce conduction losses, while turn-on and turn-off switching losses of 185mJ and 175mJ, respectively, help lower switching losses and support smaller cooling systems. The IX800FXF2YMS4 adopts Toshiba’s iXPLV™ package and silver sintering bonding technology, improving heat resistance and reliability while supporting a channel temperature rating of 175°C. With a 6,000Vrms isolation voltage and a pulsed drain current rating of 1,600A, the module is designed for demanding industrial environments. The launch expands Toshiba’s iXPLV™ SiC MOSFET module lineup to four products, giving equipment manufacturers additional options for developing high-efficiency and reliable power conversion systems.
