ROHM Semiconductor announced the development of a next-generation Schottky barrier diode (SBD) designed to overcome the traditional VF/IR trade-off, providing high-reliability protection for a wide range of high-resolution image sensor applications, including ADAS cameras.
As modern ADAS and imaging systems demand higher pixel counts for greater precision, the risk of damage caused by photovoltaic voltage generated under light exposure during power-off has grown significantly. While low-VF SBDs help mitigate this risk, achieving low IR during operation is also essential to prevent thermal runaway. Historically, balancing both low VF and low IR in a single device has posed a significant technical challenge.
ROHM has addressed this challenge by redesigning the diode’s internal structure, resulting in the RBE01VYM6AFH – an SBD that uniquely combines low VF with low IR, making it ideal for protection applications. The diode leverages the low-VF characteristics of rectification SBDs while employing a proprietary architecture to achieve IR levels traditionally difficult to realize in low-VF designs.
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The RBE01VYM6AFH meets demanding automotive and industrial requirements, delivering VF below 300mV (IF=7.5mA, Ta=-40°C) and IR less than 20mA (VR=3V, Ta=125°C). These features stop circuit damage from high photovoltaic voltages when powered off. They also reduce the risk of thermal runaway and operational issues.
The diode comes in a small SOD-323HE flat-lead package (2.5mm × 1.4mm). This design makes it easy to mount and saves space. It’s perfect for tight spaces, such as automotive cameras, industrial gear, and security systems. The device is fully AEC-Q101 qualified. This means it offers high reliability and long-term stability. So, it’s great for next-generation automotive electronics and other critical environments.