Toshiba Electronic Devices & Storage Corporation has introduced the TPM1R408RH, which uses its newest U-MOS11-H process technology. This MOSFET is designed to enhance the efficiency of switching power supply systems that have applications in AI data centers, telecommunications base stations, and industrial equipment. With the increase in energy consumption due to AI workloads and telecommunication infrastructure, this new MOSFET helps to meet the needs for enhanced efficiency, smaller designs, and reduced EMI. The device features an optimized structure that delivers a maximum drain-source on-resistance of 1.4mΩ, approximately 26% lower than Toshiba’s previous-generation equivalent, while improving the balance between conduction and switching losses with an approximately 45% reduction in the RDS(ON) × Qg figure of merit.
Also Read: Microchip Unveils Radiation-Tolerant, Low-Power, Low-Jitter Six-Output Clock Generator for Simplified Aerospace Timing Systems
The enhanced design also suppresses drain-source spike voltage during switching, helping reduce EMI and simplifying power supply design by minimizing the need for complex filter and snubber circuits. Housed in Toshiba’s new SOP Advance(E) package, the MOSFET offers approximately 65% lower package resistance and 15% lower thermal resistance than its predecessor, enabling better heat dissipation, higher power output, and more compact system designs. To further accelerate product development, Toshiba provides G0 and G2 SPICE models along with an online circuit simulator that allows engineers to verify switching power supply designs directly through a web browser without installing simulation software or downloading device models.