Alpha and Omega Semiconductor Limited (AOS), a global designer, developer, and supplier of advanced power semiconductors and power management ICs, announced its support for NVIDIA’s new 800 VDC power architecture, designed to meet the soaring power demands of next-generation AI data centers. This revolutionary system will enable megawatt-scale racks that efficiently power the exponential growth of AI workloads worldwide.
Data centers are hitting a big milestone. They are moving from traditional 54V distribution to 800 VDC architecture. This high-voltage method sends power straight to the compute layer. It skips conversion stages. This boosts energy efficiency, uses less copper, and makes systems more reliable. Data centers need advanced Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices. These devices manage high voltages and enable rapid switching speeds.
“As a key supplier to the high-performance data center market, our portfolio of SiC and GaN products is strategically aligned with the core technical demands of next generation AI factories with 800 VDC power architecture,” said Ralph Monteiro, Sr. VP, Power IC and Discrete Product lines at AOS. “We are collaborating with NVIDIA to design 800 VDC power semiconductors to provide the high efficiency and power density necessary for the new power distribution modules, from the initial AC-to-DC conversion to the final DC-to-DC stages within the racks.”
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Advancing the 800 VDC Power Ecosystem
Leveraging deep expertise in wide bandgap (WBG) technology, AOS is delivering the foundational semiconductor innovations that make NVIDIA’s 800 VDC architecture possible. The company’s products are engineered for critical power conversion stages within the new AI data center design:
High-Voltage Conversion: AOS’ SiC devices, including the Gen3 AOM020V120X3 and topside-cooled AOGT020V120X2Q, enable efficient power transfer from 13.8kV AC grid input directly to 800 VDC. These components simplify system design, reduce conversion losses, and optimize overall performance for sidecar or single-step configurations.
High-Density DC-DC Conversion: We use AOS 650V GaN FETs, like the AOGT035V65GA1, inside the racks. We also use 100V GaN FETs, such as the AOFG018V10GA1. These components make our switching compact and efficient. They help convert 800 VDC to the operating voltages needed for GPUs effectively. Thanks to these advancements, we can create smaller and lighter converters. This saves space for more computing resources. It also improves cooling and overall efficiency.
Packaging Innovations: AOS’ 80V and 100V stacked-die MOSFETs, including AOPL68801, share a common package footprint with its 100V GaN FETs, giving designers flexibility to balance cost, performance, and efficiency in LLC topologies and 54V-to-12V bus converters. The stacked-die design further enhances power density in secondary stages.
Multiphase Controllers: AOS also offers high-performance 16-phase controllers for multi-rail 54V-to-12V and downstream conversions, ensuring precise voltage regulation for high-performance AI SoCs.
Enabling the Future of Scalable, Efficient AI Infrastructure
By integrating its advanced SiC and GaN technologies into the 800 VDC ecosystem, AOS is helping drive tangible improvements across data center operations — including up to 5% higher end-to-end power efficiency, 45% less copper usage, and significantly reduced maintenance and cooling costs.
This collaboration underscores AOS’s commitment to sustainable innovation and its role in shaping the future of high-efficiency AI infrastructure.