Friday, November 22, 2024

Transphorm expands product portfolio for high-power servers, renewable energy, and industrial power conversion with the launch of two 4-terminal TO-247 devices

Transform, a world leader in GaN power semiconductors, has announced the launch of a four-terminal TO-247 package (TO-247 -4L) has launched a new SuperGaN® device. The TP65H035G4YS FET and TP65H050G4YS FET have on-resistances of 35mΩ and 50mΩ, respectively, and provide versatile switching functionality while reducing energy loss with a Kelvin source terminal. The new device is fabricated on Transform’s established GaN-on-Silicon substrate fabrication process, which is cost-effective, reliable, and suitable for high-volume production on silicon manufacturing lines. The 50mΩ TP65H050G4YS FET is available now, and the 35mΩ TP65H035G4YS FET is currently available for sampling and is expected to be available in Q1 2024.

Transform’s 4-terminal SuperGaN® devices can be used in unique design-ins or as drop-in replacements for 4-terminal silicon and SiC solutions for power supplies above 1 kilowatt in a wide variety of applications, including data centers, renewable energy, and industrial applications. It can be used for. The 4-terminal structure gives the user more freedom to improve switching performance. A 35 mΩ SuperGaN 4-terminal FET reduces losses by 15 percent at 50 kHz and 27 percent at 100 kHz in a hard-switching synchronous boost converter compared to a SiC MOSFET device with comparable on-resistance.

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Transform’s SuperGaN FETs have unique strengths, including:

  • Industry-leading durability (gate threshold +/-20V, noise immunity 4V)
  • Reduces circuits around the device and allows for easy design
  • Driving FETs is easy because common off-the-shelf drivers can be combined with silicon devices.

The TO-247-4L device offers the same durability, design and driveability with the following core specifications:

Part number

Vds (V)min

Rds(on) (mΩ) typ

Vth (V) typ

Id (25°C) (A) max

Package Variation

TP65H035G4YS

650

35

3.6

46.5

Source

TP65H050G4YS

650

50

Four

35

Source

“We are committed to providing the market with GaN FETs that can leverage the performance advantages of the SuperGaN platform for any design requirement our customers require,” said Philip Zuk, Transform’s senior vice president of business development and marketing. , continues to expand our product portfolio.The 4-pin TO-247 package requires few design changes to silicon or silicon carbide systems, making it ideal for designers and customers seeking greater power system loss reduction. “This is an important new product as we expand our product line for high-power applications.”

SOURCE : BusinessWire

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