Toshiba Releases 3rd Generation SiC MOSFETs for Industrial Equipment with Four-Pin Package that Reduces Switching Loss

Toshiba Electronic Devices & Storage Corporation has launched silicon carbide  MOSFETs, the “TWxxxZxxxC series,” that use a four-pin TO-247-4L package that reduces switching loss with the company’s latest 3rd generation SiC MOSFETs chip for industrial equipment. Volume shipments of ten products, five with 650V ratings and five with 1200V, start today.

The new products are the first in Toshiba’s SiC MOSFET line-up to use the four-pin TO-247-4L package, which allows Kelvin connection of the signal source terminal for the gate drive. The package can reduce the effect of source wire inductance inside the package, improving high-speed switching performance. For the new TW045Z120C, the turn-on loss is approximately 40% lower and the turn-off loss reduced by approximately 34%^[2], compared with Toshiba’s current product TW045N120C in a three-pin TO-247 package. This helps to reduce equipment power loss.

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Toshiba Power devices are essential components for managing and reducing power consumption in all kinds of electronic equipment, and for achieving a carbon neutral society. SiC is widely seen as the next generation material for power devices, as it delivers higher voltages and lower losses than silicon. While SiC power devices are now mainly utilized in inverters for trains, wider application is on the horizon, in vehicle electrification and the miniaturization of industrial equipment. However, the adoption and market growth of SiC devices have been held back by reliability issues.