Navitas Semiconductor, a firm that focuses on innovative power semiconductor solutions, has announced its 5th-generation GeneSiC™ silicon carbide (SiC) Trench-Assisted Planar (TAP) MOSFET series, which is a technology breakthrough and represents a significant advancement in high-voltage power semiconductor technology.
The new TAP MOSFET series has created a new benchmark in the market with its 1200V voltage rating, which is a significant improvement over the previous series. The new series is in addition to the existing ultra-high voltage 2300V and 3300V SiC technology solutions in the company’s 4th-generation product line, and it is a reflection of the company’s focus on high-performance applications in AI data centers, energy, and electrified industry applications.
What Makes the 5th-Generation SiC TAP Technology Noteworthy
Navitas’ 5th-gen SiC technology brings about the following notable improvements, which are directly relevant to power conversion efficiency, thermal management, and overall reliability:
Industry-leading switching performance: The new MOSFETs come with strong planar gate technology with trenching, which provides a 35% improvement in switching figure of merit (RDS(on) × QGD) compared to the previous 1200V technology. This leads to lower switching losses, lower heat generation, and the capability to switch at a higher frequency.
Effective and robust gate control: The devices have higher thresholds and are more resistant to parasitic influences, which is critical in high-performance power conversion systems where reliable control is a must.
Enhanced EMI and commutation performance: The “Soft Body-Diodes” integrated into the devices ensure lower electromagnetic interference and improved commutation in power conversion systems.
AEC-Plus qualified: The technology has been qualified to withstand the most stringent automotive and industrial reliability requirements, including stress testing and high-temperature and high-voltage switching performance.
These enhancements make Navitas’ 5th-generation SiC MOSFETs a compelling choice for high-performance power system designs where efficiency, supply, and reliability are of utmost concern – from next-generation data centers to the grid and transportation.
Impact on the Semiconductors and Electronics Industry
This development is a highly critical point in the Semiconductors and Electronics industry, which is undergoing a fast-paced transition due to the increasing need for efficient power conversion in the realms of electrification, data center infrastructure, renewable energy, and advanced automotive systems. (For broader context, see Semiconductors and Electronics and the industry under Semiconductors and Electronics.)
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1. Accelerating Wide-Bandgap Semiconductor Adoption
The development of the new SiC TAP technology further contributes to the increasing adoption of wide bandgap semiconductors, which include both silicon carbide (SiC) and gallium nitride (GaN) semiconductors. SiC semiconductors, in particular, have higher breakdown voltage, lower conduction losses, and superior performance at high temperatures than the conventional silicon semiconductors. The SiC semiconductors are therefore applicable in high-power applications such as electric vehicle inverters, grid converters, solid-state transformers, and fast chargers.
With the increasing demand for energy efficiency and power density in different industries, the demand for SiC MOSFETs and other semiconductors like them is increasing. This is a good move towards the global electrification of different industries and meets the sustainability criteria since efficient power conversion means less energy loss in the system.
2. Enabling Next-Generation AI Data Centers
As the number of AI workloads continues to grow, data centers are now being pushed to the limits of power delivery and cooling. Navitas’ SiC TAP solution and its GaNFast™ product lines are already being adopted in power stages that support high voltage DC architectures in AI racks and servers, and this is helping to cut down on energy waste.
The adoption of more efficient MOSFETs is one of the factors that contribute to the development of smaller, cooler, and more compact power designs, and this is especially important in AI data centers, where the power conversion efficiency can have a direct effect on the bottom-line costs. As the infrastructure grows to support next-generation computing, high-performance SiC solutions will become even more important.
3. Supporting Grid Infrastructure and Renewable Energy
Apart from data centers, the power utility and renewable energy industry is also adopting SiC technology for medium- and high-voltage conversion applications such as grid-connected inverters and energy storage interfaces. The ability of SiC MOSFETs to withstand the harsh thermal and electrical environments of these applications makes them suitable for these applications.
Reliability improvements such as long-term stress testing and very low failure rates are also crucial for achieving high availability. This is especially true as power grids are being developed to support intermittent renewable energy sources and high-capacity energy storage systems.
Business Implications for Semiconductors and Electronics Companies
Competitive Advantage and Differentiation
In the semiconductor industry, innovation in SiC and other wide-bandgap materials is becoming a differentiator. Companies that can provide high-efficiency and high-reliability solutions will be better off in securing design wins with top OEMs and system integrators in the rapidly growing markets of EVs, data centers, and industrial automation.
Navitas’s 5th-gen SiC solution strengthens its competitive position in the power electronics market, where it competes with established companies. Nevertheless, the company may experience competitive forces from larger companies with deeper R&D pockets, such as Infineon, Wolfspeed, and Texas Instruments.
Supply Chain and Ecosystem Growth
The whole semiconductor supply chain, from foundries to assembly facilities and distributors, will also benefit as the industry begins to scale up the production of advanced SiC solutions. The global distribution partnerships and support infrastructure make it easier for system designers to incorporate new SiC solutions into their products.
Innovation in Adjacent Markets
Premium SiC solutions also drive innovation in related domains like industrial electrification, aerospace, and advanced manufacturing systems. With advancements in power electronic system architectures, system designers can now consider novel form factors, integrated solutions, and customizations for specific applications.
Conclusion
The emergence of Navitas’ 5th-generation SiC Trench-Assisted Planar technology is indicative of the rapid innovation that is taking place in the Semiconductors and Electronics industry, which is being driven by the dual forces of efficiency and performance. With the growing need for high-power semiconductors in the global electrification, AI computing, and renewable energy transitions, such technology platforms are set to assume a pivotal importance in defining the future of electronic systems.