KIOXIA America, announced it has commenced sample shipments of 512Gb Triple-Level Cell (TLC) memory devices incorporating its 9th generation BiCS FLASH™ 3D flash memory technology. It plans to commence mass production in fiscal year 2025. The devices are designed to support applications requiring high performance and exceptional power efficiency in the low- to mid-level storage capacities. They will also be integrated into Kioxia’s enterprise SSDs, in particular those that aim to maximize GPU efficiency in AI systems.
Kioxia continues to pursue a dual-axis strategy to address the diverse needs of cutting-edge applications while delivering competitive products providing optimal investment efficiency. The two axes are:
- 9th generation BiCS FLASH™ products: these achieve high performance at reduced production cost by leveraging CBA (CMOS directly Bonded to Array) technology,2 which integrates existing memory cell technologies3 with the latest CMOS technology.
- 10th generation BiCS FLASH™ products: these incorporate an expansion in the number of memory layers to meet the expected future demand for larger-capacity, high-performance solutions.
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The new 9th generation BiCS FLASH™ 512Gb TLC, developed using a 120-layer stacking process based on 5th generation BiCS FLASH™ technology and advanced CMOS technology, exhibits significant performance improvements over Kioxia’s existing BiCS FLASH™ products4 with the same 512Gb capacity. These include:
- Write performance: 61% improvement
- Read performance: 12% improvement
- Power efficiency: enhanced by 36% during write operations and 27% during read operations
- Data transfer speed: the Toggle DDR6.0 interface enables high-speed 3.6Gb/s5 NAND interface performance
- Bit density: increased by 8% through advancements in planar scaling
Additionally, Kioxia has confirmed that the 512Gb TLC operates at NAND interface speeds of up to 4.8Gb/s5 under demonstration conditions. The product lineup will be determined in accordance with market demands.
SOURCE: Businesswire