Transphorm, the global leader in robust GaN power semiconductors for the future of next-generation power systems, has announced that its Gallium Nitride ( GaN) platform to be equipped with the world’s first integrated photovoltaic (PV) system by DAH Solar (Anhui Daheng New Energy Technology, a subsidiary of DAH Solar). This PV system will be used in DAH Solar’s new “Solar Unit” product line . DAH Solar believes that Transphorm’s GaN FETs will enable the production of smaller, lighter and more reliable solar panels that consume less energy while increasing overall power generation. This design achievement demonstrates Transphorm’s leadership position as the “One Core GaN Platform Across the Power Spectrum” by solidifying its value proposition in the renewable energy market, where total GaN demand now exceeds $500 million.
DAH Solar uses Transphorm’s 150mΩ and 70mΩ GaN FETs in their solar unit design architectures (both DC-DC and DC-AC power stages). The solar units are available in three models with output powers of 800W, 920W and 1500W, with peak efficiencies of 97.16%, 97.2% and 97.55% respectively. GaN devices have higher switching frequencies and power densities than existing silicon solutions. Notably, two FETs are available in a PQFN88 performance package combined with a commonly used gate driver, helping reduce design time for DAH solar.
Yong Gu, general manager of DAH Solar, said: “We have a strong heritage in manufacturing innovative photovoltaic products, so we are always looking for ways to evolve our products with cutting-edge technology to create an even better, more efficient end-user experience. We consider Transphorm to be the authority in GaN manufacturing and we have found their advanced GaN FETs to be the perfect device for our solar unit product line.Easy to design in and great performance. The devices we have allow us to continue building on our legacy.”
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Further achievements for the first time in the GaN industry
Transphorm currently addresses the widest range of power conversion requirements (45W to 10kW and above) in the widest range of power applications. The company’s FET portfolio includes 650V and 900V devices, with a 1200V device currently in development. These FETs are JEDEC and AEC-Q101 qualified, making them an ideal solution for everything from power adapters and computer power supply units to various industrial UPSs and electric vehicle mobility systems.
The company’s innovations continue to set new standards across the GaN power semiconductor industry. Together, the company helps customers launch first-to-market disruptive applications like DAH Solar’s PV systems. These achievements are due to Transphorm’s normally-off “SuperGaN®” platform, which leverages the inherent advantages of GaN using a cascode d-mode configuration. The superior physics of this high-performance GaN platform design provide unparalleled competitive advantages, including easier operation, easier design, improved reliability, and significantly easier manufacturing. Masu.
“The value that Transphorm’s GaN platform brings to a variety of applications is continuously demonstrated by market leaders such as DAH Solar,” said Kenny Yim, Vice President of Sales for Asia, Transphorm. “Solar inverters and other high-power applications require reliable, high-performance power semiconductors that can withstand decades of operation in harsh environments. Reduced thermal stress on other design-in components is a tremendous achievement over alternative GaN and silicon solutions and the benefits our GaN brings to next-generation power systems It emphasizes.”
SOURCE: BusinessWire