Coherent Corp. has made major strides in their SiC epitaxial technology, which now enables the creation of power devices capable of handling up to 10kV, useful in future AI data centers and industrial environments. With the growing adoption of electric power in industries such as renewables, railways, and electrical infrastructure, coupled with increased demand for datacenters driven by artificial intelligence, there is an increasing necessity for highly efficient and high voltage power systems. The newly developed 150mm and 200mm thick epitaxy technology from Coherent can handle up to 10kV production and even exceed this voltage level. These innovations are particularly critical for multi-megawatt datacenters, where improved power conversion efficiency directly reduces energy consumption and operational costs.
Also Read: Adyen Unveils Intelligent Money Movement To Unify Enterprise Payments
“Next-generation datacenter power architectures and high-voltage industrial systems are key drivers for silicon carbide adoption,” said Gary Ruland, Senior Vice President, Silicon Carbide LLC. “Our new thick epitaxy capability for multi-kilovolt SiC devices enables customers to achieve higher efficiency and power density in critical applications such as energy infrastructure, high-capacity uninterruptible power supplies, and advanced power distribution systems in AI datacenters.” Coherent continues to strengthen its SiC portfolio, reinforcing its position in enabling advanced power solutions across industrial, automotive, and energy markets.
