ROHM has developed the TSC3PAK (14.00 × 18.58 × 3.50mm) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation...
Ansys multiphysics platform provides proven solutions to address challenges in simulating and managing power and thermal effects for heterogeneous 2.5D/3D-IC multi-die systems
Ansys announces that Samsung...